KITAKAMI, Japan, Nov 5 (Reuters) - Bain Capital-backed Kioxia said on Tuesday it expects demand for flash memory to increase by about 2.7 times in the five years to 2028 on the back of the boom in ...
Recently a team at Fudan University claimed to have developed a picosecond-level Flash memory device (called ‘PoX’) that has an access time of a mere 400 picoseconds. This is significantly faster than ...
TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, has successfully developed a prototype of a large-capacity, high-bandwidth flash memory module essential for large-scale ...
TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced that it has begun sampling new Universal Flash Storage (2) (UFS) Ver. 4.1 embedded memory devices, ...
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China’s top flash memory maker to expand into DRAM production
YMTC, China’s top flash memory maker, intends to expand into DRAM production, including HBM chips, amid tightened U.S. export controls.
China's top flash memory chipmaker Yangtze Memory Technologies Co (YMTC) is planning to expand into manufacturing DRAM chips ...
What just happened? Researchers at Fudan University in Shanghai have unveiled a flash memory device that breaks speed records once thought unreachable. Dubbed "PoX," the device can program data in ...
High Bandwidth Memory (HBM) is the commonly used type of DRAM for data center GPUs like NVIDIA's H200 and AMD's MI325X. High Bandwidth Flash (HBF) is a stack of flash chips with an HBM interface. What ...
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