Bipolar RF transistors are designed to handle high power radio frequency (RF) signals in amplifiers, transmitters, monitors, and other devices. Like all transistors, they are used to switch and ...
RF power amplifiers use a wide range of active devices, such as vacuum tubes and transistors (usually BJTs or MOSFETs). Vacuum tubes, still widely used in high-power RF amplifiers, have the following ...
Over the years, tutorials have appeared in EMC journals explaining how to estimate the power required from a power amplifier intended for use in an RF immunity test system. Little material, if any, ...
Munich, Germany – June 28, 2004 – Infineon Technologies AG is introducing the next generation of its GOLDMOS® LDMOS (laterally diffused metal-oxide semiconductor) die technology for high-performance, ...
NXP introduced its third generation of Airfast products, which includes four LDMOS transistors for cellular macro base stations. The Airfast 3 technology meets the stringent requirements of all ...
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