KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has started mass production of "TB9103FTG," a gate driver IC [1] for automotive brushed DC motors, ...

LONDON--(BUSINESS WIRE)--The global gate driver IC market is expected to grow at a CAGR of close to 7% during the period 2018-2022, according to a new market research study by Technavio. The report ...

Engineers in the automotive space are faced with the challenges of delivering inverter designs with increased efficiency, higher drive current and greater immunity to noise, especially in hybrid ...

Santa Clara, CA and Kyoto, Japan, Nov. 08, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today introduced the new BD2311NVX-LB gate driver IC, optimized for GaN devices, which achieves gate drive speeds ...

International Rectifier announces the AUIRS2332J 600-V three-phase gate driver IC for automotive high-voltage motor drives for electric (EV) and hybrid electric vehicle (HEV) applications. The ...

Toshiba’s new IC comes in a compact 6mm×6mm P-VQFN36-0606-0.50 package. Credit: Alexander Tolstykh/Shutterstock. Toshiba Electronics Europe has started offering engineering samples of its TB9084FTG, a ...

The IXDD404, IXDI404, and IXDN404 gate drive ICs of IXYS are evaluated with EVDD404 board in which it has a general-purpose circuit that simplify evaluation. A circuit for the tri-sate function is ...

[Zach Armstrong] presents for your viewing pleasure a simple guide to building a solid-state Tesla coil. The design is based around a self-resonant setup using the UCC2742x gate driver IC, which is ...

If you are going to use a silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in your next development, you will ask yourself: how do I develop the best gate driver for it ...

Toshiba is sampling a gate driver IC tailored for three-phase brushless DC (BLDC) motors for functions like power sliding doors, power back doors (power tailgates), and power seats, as well as ...

While attending APEC 2019, it seemed that gallium-nitride (GaN) transistors were just coming into their own in high-volume applications, while silicon-carbide (SiC) transistors have found wide ...