The Class E power amplifier can be turned into an efficient, tuned-input, tuned-output (TITO) oscillator with the addition of a tuned circuit at its gate. The oscillator/amplifier has a power-added ...

More efficiency, shorter time to charge, higher power density – those are the customer demands of semiconductor devices for wireless charging systems. A GaN HEMT can do the job in class E RF power ...

A unique design flexibility that can either extend the maximum operating frequency of a power amplifier or allow the use of larger active devices with higher power handling capability. This paper ...

Gallium nitride (GaN) RF transistors have traditionally been depletion mode, making them difficult to bias. High frequency enhancement mode transistors, such as the EPC8000 series eGaN FETs from EPC, ...

HONG KONG--(BUSINESS WIRE)--OnMicro, an innovator in RF and SoC semiconductors, today announced that it has received a volume production order from Cavli Wireless for the Company’s high performance ...